SST25VF512A-33-4C-SAE概述

SST的串行閃存系列具有四線、SPI兼容接口，允許占用較少板空間的低管腳數封裝，并最終降低系統總成本。SST25VF512A SPI串行閃存采用SST專有的高性能CMOS超閃存技術制造。與替代方法相比，分裂柵單元設計和厚氧化物隧道注入器獲得更好的可靠性和可制造性。

SST25VF512A-33-4C-SAE附加功能

串行接口架構-SPI兼容：模式0和模式3

低功耗：–有效讀取電流：7毫安（典型）-待機電流：8微安（典型）靈活的擦除能力-統一4字節扇區-統一32字節疊加塊

快速擦除和字節程序：–芯片擦除時間：70毫秒（典型）–扇區或塊擦除時間：18毫秒（典型）–字節程序時間：14微秒（典型）

自動地址增量（AAI）編程-減少字節程序操作的芯片編程總時間

提供包裝-8-鉛SOIC 150 mil車身寬度-8-接觸式傳感器（5mm x 6mm）

SST25VF512A-33-4C-SAE均符合RoHS標準

Device Overview

Summary

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512A SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features

Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 μA (typical)

Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks

Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 μs (typical)

Auto Address Increment (AAI) Programming– Decrease total chip programming time over Byte-Program operations

Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)

All non-Pb (lead-free) devices are RoHS compliant